BLF4G22S-100,112 NXP Semiconductors, BLF4G22S-100,112 Datasheet - Page 8

• Manufacturer Part Number: BLF4G22S-100,112
• Description: BASESTATION FINAL 2.2GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G22S-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2399; 934058168112; BLF4G22S-100; BLF4G22S-100

Philips Semiconductors
9397 750 14338
Product data sheet
Table 10:
[1]
[2]
[3]
[4]
Component
C1, C2, C11
C3
C4, C10
C5, C8, C14,
C15
C6
C7
C9
C12
C13
C16
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
L11
L12
L13
L14
R1
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 180R or capacitor of same quality.
Striplines are on a double copper-clad Taconic RF35 PCB (
List of components (see
Description
tantalum capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
tantalum capacitor
multilayer ceramic chip capacitor
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
SMD resistor
Rev. 01 — 10 January 2006
BLF4G22-100; BLF4G22S-100
Figure 6
and
[1]
[2]
[1]
[3]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
Figure 7
Value
10 F; 35 V
4.7 F; 25 V
8.2 pF
1.5 F; 50 V
0.6 pF
4.7 pF
220 nF; 50 V
220 F; 63 V
4.7 F; 50 V
7.5 pF
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
4.7 ; 0.1 W
0
0
0
0
0
0
0
0
0
0
0
0
0
0
r
= 50
= 50
= 24
= 15
= 9.5
= 60
= 60
= 8.2
= 5.5
= 50
= 50
= 34
= 50
= 43
= 3.5); thickness = 0.76 mm.
)
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Dimensions
(W
(W
(W
(W
(W
(W
(W
(W
(W
(W
(W
(W
(W
(W
L) 32.3 mm
L) 2.2 mm
L) 2.3 mm
L) 2.4 mm
L) 9.3 mm
L) 4 mm
L) 14.5 mm
L) 9.3 mm
L) 3 mm
L) 11 mm
L) 9.5 mm
L) 3 mm
L) 12.7 mm
L) 13.5 mm
1.2 mm
25.8 mm
3 mm
1.7 mm
1.7 mm
4.8 mm
8 mm
14 mm
16.8 mm
1.7 mm
1.7 mm
1.2 mm
1.7 mm
2.1 mm
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