BLF4G22S-100,112 NXP Semiconductors, BLF4G22S-100,112 Datasheet - Page 7

• Manufacturer Part Number: BLF4G22S-100,112
• Description: BASESTATION FINAL 2.2GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G22S-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2399; 934058168112; BLF4G22S-100; BLF4G22S-100

Fig 7. Component layout for 2.14 GHz test circuit
The components are situated on double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (
The other side is unetched and serves as a ground plane.
See
Table 10
75 mm
for list of components.
V
L1
G
C1
50 mm
R1
C3
C2
C7
L2
L3
L4
C5
C4
C6
L5
L7
L6
L8
L14
C12
r
C8 C9 C10
= 3.5); thickness = 0.76 mm.
L9
C11
L10
C13
C16
C14
C15
L11
L12
L13
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