MT45W2MW16BGB-701 IT Micron Technology Inc, MT45W2MW16BGB-701 IT Datasheet - Page 24

• Manufacturer Part Number: MT45W2MW16BGB-701 IT
• Manufacturer: Micron Technology Inc

Specifications of MT45W2MW16BGB-701 IT

• Operating Temperature (max): 85C
• Operating Temperature (min): -40C
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Software Access to the Configuration Register
Figure 17:
PDF: 09005aef82832fa2/Source: 09005aef82832f5f
32mb_burst_cr1_0_p24z_2.fm - Rev. E 9/08 EN
Load Configuration Register
Note:
Software access of the configuration registers uses a sequence of asynchronous READ
and asynchronous WRITE operations. The contents of the configuration registers can be
read or modified using the software sequence.
The configuration registers are loaded using a four-step sequence consisting of two
asynchronous READ operations followed by two asynchronous WRITE operations (see
Figure 17). The READ sequence is virtually identical except that an asynchronous READ
is performed during the fourth operation (see Figure 18 on page 25).
The address used during all READ and WRITE operations is the highest address of the
CellularRAM device being accessed (1FFFFFh for 32Mb); the content at this address is
not changed by using this sequence.
The data value presented during the third operation (WRITE) in the sequence defines
whether the BCR or the RCR is to be accessed. If the data is 0000h, the sequence will
access the RCR; if the data is 0001h, the sequence will access the BCR. During the fourth
operation, DQ[15:0] transfer data into or out of bits 15–0 of the configuration registers.
The use of the software sequence does not affect the ability to perform the standard
(CRE-controlled) method of loading the configuration registers. However, the software
nature of this access mechanism eliminates the need for the control register enable
(CRE) pin. If the software mechanism is used, the CRE pin can simply be tied to V
port line often used for CRE control purposes is no longer required.
Software access of the RCR should not be used to enter or exit DPD.
LB#/UB#
Address
WE#
Data
OE#
It is possible that the data stored at the highest memory location will be altered if the data
at the falling edge of WE# is not 0000h or 0001h.
CE#
32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Address
(MAX)
XXXXh
READ
Address
(MAX)
XXXXh
READ
24
RCR: 0000h
BCR: 0001h
Address
(MAX)
WRITE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Address
CR value
WRITE
(MAX)
Don't Care
in
Configuration Registers
©2007 Micron Technology, Inc. All rights reserved.
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