MT45W2MW16BGB-701 IT Micron Technology Inc, MT45W2MW16BGB-701 IT Datasheet - Page 33

MT45W2MW16BGB-701 IT

Manufacturer Part Number
MT45W2MW16BGB-701 IT
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT45W2MW16BGB-701 IT

Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
Table 8:
PDF: 09005aef82832fa2/Source: 09005aef82832f5f
32mb_burst_cr1_0_p24z_2.fm - Rev. E 9/08 EN
Description
Supply voltage
I/O supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Operating Current
Asynchronous random READ/
WRITE
Asynchronous page READ
Initial access, burst READ/WRITE
Continuous burst READ
Continuous burst WRITE
Standby current
Electrical Characteristics and Operating Conditions
Wireless temperature
Notes:
1. –30°C exceeds the CellularRAM Workgroup 1.0 specification of –25°C.
2. Input signals may overshoot to V
3. V
4. Input signals may undershoot to V
5. BCR[5] = 0b.
6. This parameter is specified with the outputs disabled to avoid external loading effects.
7. I
The user must add the current required to drive output capacitance expected in the actual
system.
inputs must be driven either to V
after power-up, after changes to the PAR array partition, or when entering standby mode.
SB
IH
V
V
(MAX) values measured with PAR set to FULL ARRAY. To achieve low standby current, all
V
(MIN) value is not aligned with CellularRAM Workgroup 1.0 specification of V
1
IN
IN
chip enabled;
I
chip disabled
I
IN
OE# = V
Conditions
(–30ºC < T
OH
OL
32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
CE# = V
= V
= V
= 0 to V
I
OUT
= +0.2mA
= –0.2mA
CC
CC
Q or 0V
Q or 0V
= 0
IH
CC
CC
C
or
Q
< +85ºC); industrial temperature (–40ºC < T
Q
I
V
I
I
CC
V
I
CC
I
CC
V
V
V
V
I
CC
CC
I
CC
I
LO
OH
SB
CC
OL
LI
3W
IH
IL
1P
3R
1
2
Q
33
Symbol
CC
CC
SS
Q + 1.0V for periods less than 2ns during transitions.
Standard
104 MHz
104 MHz
104 MHz
Q or V
80 MHz
80 MHz
80 MHz
- 1.0V for periods less than 2ns during transitions.
–70
–70
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SS
. I
SB
might be slightly higher for up to 500ms
0.8 V
Min
–0.2
1.7
1.7
1.4
CC
Electrical Characteristics
Q
C
< +85ºC)
V
0.2 V
©2007 Micron Technology, Inc. All rights reserved.
CC
Max
1.95
Q + 0.2
110
0.4
3.6
20
15
40
35
25
18
40
35
1
1
CC
Q
Units
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
CC
Q - 0.4V.
Notes
2, 3
4
5
5
6
6
6
6
6
7

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