PCA2002U/10AB/1,00 NXP Semiconductors, PCA2002U/10AB/1,00 Datasheet - Page 12

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PCA2002U/10AB/1,00

Manufacturer Part Number
PCA2002U/10AB/1,00
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PCA2002U/10AB/1,00

Lead Free Status / RoHS Status
Compliant
NXP Semiconductors
8. Limiting values
PCA2002_6
Product data sheet
Table 8.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
Symbol Parameter
V
V
t
V
I
T
T
sc
lu
stg
amb
DD
I
ESD
When writing to the OTP cells, the supply voltage (V
period of 1 s.
Connecting the battery with reversed polarity does not destroy the circuit, but in this condition a large
current flows which rapidly discharges the battery.
Pass level; Human Body Model (HBM), according to
Pass level; Machine Model (MM), according to
Pass level; latch-up testing according to
According to the NXP store and transport requirements (see
stored at a temperature of +8 °C to +45 °C and a humidity of 25 % to 75 %. For long term storage products
deviant conditions are described in that document.
supply voltage
input voltage
short circuit duration time
electrostatic discharge
voltage
latch-up current
storage temperature
ambient temperature
Limiting values
32 kHz watch circuit with programmable output period and pulse width
All information provided in this document is subject to legal disclaimers.
Rev. 06 — 6 May 2010
Ref. 6 “JESD78”
V
output
Conditions
HBM
MM
SS
= 0 V
Ref. 5
DD
Ref. 4
“JESD22-A115”.
) can be raised to a maximum of 12 V for a time
at maximum ambient temperature (T
“JESD22-A114”.
Ref. 8
[1][2]
[3]
[4]
[5]
[6]
“NX3-00092”) the devices have to be
Min
−1.8
−0.5
-
-
-
-
−30
−10
PCA2002
Max
+7.0
+7.5
indefinite
±2000
±200
100
+100
+60
© NXP B.V. 2010. All rights reserved.
amb(max)
12 of 26
Unit
V
V
s
V
V
mA
°C
°C
).

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