FGAF40N60UF Fairchild Semiconductor, FGAF40N60UF Datasheet - Page 3

• Manufacturer Part Number: FGAF40N60UF
• Description: Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses
• Manufacturer: Fairchild Semiconductor

Specifications of FGAF40N60UF

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Compliant

©2004 Fairchild Semiconductor Corporation
Fig 3. Saturation Voltage vs.
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
Case Temperature at Variant Current Level
20
16
12
4
3
2
1
0
160
120
8
4
0
80
40
0
0
0
Common Emitter
Vge=15V
0
Common Emitter
Tc = 25 ℃
30
4
Gate - Emitter Voltage, V
Case Temperature, T
I
Collector-Emitter Voltage,V
C
2
= 10A
60
8
20A
4
40A
90
12
C
[ ℃ ]
GE
GE
Common Emitter
T
C
CE
[V]
= 25 ℃
20V
(V)
6
120
16
V
GE
Ic=10A
40A
= 10V
20A
15V
12V
150
20
8
30
25
20
15
10
5
0
Fig 2. Typical Saturation Voltage
Fig 6. Saturation Voltage vs. V
80
70
60
50
40
30
20
10
0.1
0
Fig 4. Load Current vs. Frequency
20
16
12
0.5
8
4
0
Duty cycle : 50%
Tc = 100 ℃
Powe Dissipation = 24W
Common Emitter
V
Tc= 25 ℃
Tc= 125 ℃
0
GE
=15V
Characteristics
1
Collector-Emitter Voltage, V
4
1
Ic=10A
Gate - Emitter Voltage, V
Vcc = 300V
Load Current : peak of square wave
Frequency [kHz]
8
10
20A
40A
12
100
GE
GE
Common Emitter
T
CE
C
[V]
= 125 ℃
(V)
16
FGAF40N60UF Rev. A
1000
10
20