FGAF40N60UF Fairchild Semiconductor, FGAF40N60UF Datasheet - Page 5

• Manufacturer Part Number: FGAF40N60UF
• Description: Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses
• Manufacturer: Fairchild Semiconductor

Specifications of FGAF40N60UF

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Compliant

©2004 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
1000
3000
100
100
0.1
10
10
1
Eoff
Eon
Eoff
Ic MAX (Continuous)
Ic MAX (Pulsed)
Single Nonrepetitive
Pulse Tc = 25
Curves must be derated
linearly with increase
in temperature
10
0 .0 1
0 .1
1
1
1 E -5
0 .0 2
15
Collector - Emitter Voltage, V
0 .2
0 .0 1
0 .5
0 .1
0 .0 5
sin gle p ulse
Collector Current , Ic (A)
o
C
DC Operation
20
10
1 E -4
25
Common Emitter
V
R
T
T
C
C
CC
G
1ms
= 25 ℃
= 125 ℃
= 10
= 300V, V
30
100 s
100
Fig 17. Transient Thermal Impedance of IGBT
CE
[V]
GE
50 s
35
= ± 15V
1 E -3
Rectangular Pulse Duration [sec]
40
1000
0 .0 1
Fig 14. Gate Charge Characteristics
Fig 16. Turn-Off SOA Characteristics
500
100
15
12
0.1
10
9
6
3
0
1
0
1
Common Emitter
R
(Tc=25 ℃ )
L
=15 Ω
0 .1
Collector-Emitter Voltage, V
30
Gate Charge, Qg (nC)
10
Safe Operating Area
V
GE
=20V, T
Vcc=100V
Pdm
Duty factor D = t1 / t2
Peak Tj = Pdm Zthjc + T
60
200V
1
C
300V
=100
t1
t2
100
o
C
CE
90
[V]
C
1 0
FGAF40N60UF Rev. A
1000
120