FGAF40N60UF Fairchild Semiconductor, FGAF40N60UF Datasheet - Page 4

• Manufacturer Part Number: FGAF40N60UF
• Description: Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses
• Manufacturer: Fairchild Semiconductor

Specifications of FGAF40N60UF

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Compliant

©2004 Fairchild Semiconductor Corporation
Fig 9. Turn-Off Characteristics vs.
Fig 7. Capacitance Characteristics
Fig 11. Turn-On Characteristics vs.
1000
100
3000
2500
2000
1500
1000
100
200
500
20
10
0
1
1
Gate Resistance
Ton
Common Emitter
Vcc=300V,V
Ic=20A
Tc = 25 ℃
Tc = 125 ℃
Tr
Collector Current
10
15
Collector-Emitter Voltage, V
GE
= ± 15V
Gate Resistance, R
Collector Current, Ic (A)
Cres
Coes
Cies
20
10
25
Common Emitter
V
R
T
T
C
C
CC
G
G
= 25 ℃
= 125 ℃
= 10
30
= 300V, V
( Ω )
10
Common Emitter
V
T
GE
C
CE
= 25 ℃
= 0V, f = 1MHz
(V)
35
GE
100
= ± 15V
Toff
Tf
Tf
40
200
30
100
2000
1000
300
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
100
10
1000
50
100
20
1
1
Common Emitter
Vcc=300V,V
Ic=20A
Tc = 25 ℃
Tc = 125 ℃ - - - -
Common Emitter
Vcc=300V,V
Ic=20A
Tc = 25℃
Tc = 125℃
Toff
Toff
Gate Resistance
Tf
Tf
Common Emitter
V
R
T
T
10
Collector Current
CC
C
C
G
= 25 ℃
= 125 ℃
= 10
= 300V, V
GE
GE
=± 15V
15
= ± 15V
Gate Resistance, R
Gate Resistance, R
GE
Collector Current, I
= ± 15V
20
10
10
25
G
G
( Ω )
C
( Ω )
[A]
30
100
100
35
Ton
Eon
Eoff
FGAF40N60UF Rev. A
Tr
200
200
40