K4S643232H-TI70 Samsung Semiconductor, K4S643232H-TI70 Datasheet - Page 8

• Manufacturer Part Number: K4S643232H-TI70
• Manufacturer: Samsung Semiconductor

Specifications of K4S643232H-TI70

• Lead Free Status / Rohs Status: Not Compliant

Notes :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
ABSOLUTE MAXIMUM RATINGS
K4S643232H
CAPACITANCE
Note :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
31
IH
IL
Parameter
DD
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
supply relative to Vss
Pin
(V
DD
IN
= 3.3V, T
≤ V
DDQ
,
A
V
= 23°C, f = 1MHz, V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Symbol
DD
C
C
IN
C
T
C
ADD
OUT
, V
I
CLK
, V
STG
OS
IN
Min
-0.3
3.0
2.0
2.4
-10
REF
-
OUT
SS
DDQ
= 0V, T
= 1.4V ± 200 mV)
- 8 -
A
= 0 to 70°C)
Typ
3.3
3.0
0
-
-
-
Min
-
-
-
-
-55 ~ +150
V
-1.0 ~ 4.6
-1.0 ~ 4.6
DDQ
Value
Max
3.6
0.8
0.4
10
50
-
+0.3
Max
4.5
4.5
6.5
4
Rev. 1.2 April 2006
Unit
uA
V
V
V
V
V
SDRAM
I
Unit
I
mA
OH
°C
OL
V
V
Unit
pF
pF
pF
pF
Note
= -2mA
= 2mA
1
2
3