K4S643232H-TI70 Samsung Semiconductor, K4S643232H-TI70 Datasheet - Page 9

• Manufacturer Part Number: K4S643232H-TI70
• Manufacturer: Samsung Semiconductor

Specifications of K4S643232H-TI70

• Lead Free Status / Rohs Status: Not Compliant

DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
K4S643232H
Notes :
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
1. Unless otherwise notes, Input level is CMOS(V
2. Measured with outputs open.
3. Refresh period is 64ms.
4. K4S643232H-UC
5. K4S643232H-UL
ICC5
ICC6
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
Symbol
Burst Length =1
tRC ≥ tRC(min), tCC ≥ tCC(min), Io =
0mA
CKE ≤ VIL(max), tCC = 15ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
CKE ≤ VIL(max), tCC = 15ns
CKE ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Io = 0 mA, Page Burst
All bank Activated, tCCD = tCCD(min)
tRC ≥ tRC(min)
CKE ≤ 0.2V
Test Condition
IH
/V
A
IL
= 0 to 70°C, V
=V
DDQ
- 9 -
/V
SSQ
IH(min)
) in LVTTL.
Latency
CAS
/V
3
2
3
2
3
2
IL(max)
=2.0V/0.8V)
140
170
150
-50
140
160
150
-55
Speed
120
120
450
110
Rev. 1.2 April 2006
12
40
35
2
2
7
4
4
2
130
150
140
-60
130
140
120
-70
SDRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
2
2
3
4
5