FDS6692 Fairchild Semiconductor, FDS6692 Datasheet - Page 2

• Manufacturer Part Number: FDS6692
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDS6692

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.012Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 12A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
GSSF
GSSR
S
DSS
D(on)
d(on)
r
d(off)
f
FS
BV
V
GS(th)
DS(on)
SD
iss
oss
rss
g
gs
gd
JA
GS(th)
DSS
T
T
is the s um of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
J
J
DSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
(Note 2)
(Note 2)
CA
2
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
= 25°C unless otherwise noted
= 24 V, V
= V
= 5 V,
= 15 V,
= 15 V, I
= 15 V, I
= 0 V, I
= 16 V, V
= –16 V, V
= 10 V,
= 4.5 V,
= 10 V, I
= 10 V,
= 10 V, R
= 5 V
= 0 V,
Test Conditions
GS
b) 105°C/W when
, I
mounted on a .04 in
pad of 2 oz copper
D
D
= 250 A
= 250 A
I
DS
S
D
D
D
GS
DS
= 12 A, T
GEN
= 12 A,
= 2.1 A
= 1 A,
= 0 V
V
I
V
= 0 V
= 0 V
D
DS
GS
= 6
= 12 A
I
I
D
D
= 5 V
= 0 V,
= 12 A
= 11 A
J
2
= 125 C
(Note 2)
Min
30
50
1
Typ
2164
11.5
357
138
1.6
9.5
0.7
26
–5
14
50
35
10
18
9
5
5
5
c) 125°C/W when mounted
on a minimum pad.
Max Units
–100
14.5
100
2.1
1.2
12
18
10
56
20
25
1
3
FDS6692 Rev D (W)
mV/ C
mV/ C
m
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
A
V
A