FDS6692 Fairchild Semiconductor, FDS6692 Datasheet - Page 4

• Manufacturer Part Number: FDS6692
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDS6692

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.012Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 12A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.01
I
0.001
D
0.01
= 12A
R
SINGLE PULSE
R
0.1
DS(ON)
0.0001
1
V
JA
T
GS
A
= 125
5
= 25
LIMIT
= 10V
o
o
C/W
C
0.1
V
10
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
Q
0.2
g
, GATE CHARGE (nC)
0.1
0.05
0.001
15
0.02
0.01
1
DC
SINGLE PULSE
Figure 11. Transient Thermal Response Curve.
10s
20
1s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
V
10ms
DS
25
= 10V
0.01
10
1ms
20V
100µs
30
15V
100
35
0.1
3000
2500
2000
1500
1000
50
40
30
20
10
500
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
RSS
1
0.01
5
V
Power Dissipation.
DS
C
OSS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
t
10
1
, TIME (sec)
15
C
1
ISS
P(pk)
Duty Cycle, D = t
T
R
20
R
J
JA
- T
100
JA
SINGLE PULSE
(t) = r(t) + R
R
A
t
= 125 °C/W
JA
1
T
V
10
= P * R
f = 1MHz
t
A
2
GS
= 125°C/W
= 25°C
FDS6692 Rev D (W)
25
= 0 V
JA
1
(t)
JA
/ t
100
2
30
1000