FDS6692 Fairchild Semiconductor, FDS6692 Datasheet - Page 3

• Manufacturer Part Number: FDS6692
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDS6692

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.012Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 12A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics
50
40
30
20
10
50
40
30
20
10
0
0
1.5
Figure 3. On-Resistance Variation with
0
1.8
1.6
1.4
1.2
0.8
0.6
V
Figure 1. On-Region Characteristics.
1
GS
-50
Figure 5. Transfer Characteristics.
6.0V
V
DS
= 10V
= 5V
V
I
GS
D
= 12A
-25
= 10V
0.5
3.5V
V
GS
V
2
DS
, GATE TO SOURCE VOLTAGE (V)
4.5V
T
, DRAIN-SOURCE VOLTAGE (V)
0
J
Temperature.
, JUNCTION TEMPERATURE (
1
25
3.0V
2.5
50
T
A
1.5
= -55
75
o
C
2.5V
3
100
o
125
C)
2
o
25
C
o
125
C
2.5
3.5
150
Figure 6. Body Diode Forward Voltage Variation
0.025
0.015
0.005
0.03
0.02
0.01
0.0001
0.001
0.01
2.25
1.75
1.25
0.75
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
100
with Source Current and Temperature.
0.1
1.5
10
2
1
2
1
0
0
Drain Current and Gate Voltage.
V
GS
T
A
= 0V
= 25
V
Gate-to-Source Voltage.
GS
0.2
V
o
= 3.0V
C
SD
10
V
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
A
= 125
T
0.4
I
A
D
= 125
, DRAIN CURRENT (A)
3.5V
o
C
20
o
C
6
0.6
4.5V
25
o
C
30
6.0V
0.8
-55
8
o
C
40
FDS6692 Rev D (W)
I
10V
D
1
= 6 A
1.2
50
10