P89LPC931FDH NXP Semiconductors, P89LPC931FDH Datasheet - Page 38

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P89LPC931FDH

Manufacturer Part Number
P89LPC931FDH
Description
MCU 8-Bit 89LP 80C51 CISC 8KB Flash 2.5V/3.3V 28-Pin TSSOP Tube
Manufacturer
NXP Semiconductors
Datasheet

Specifications of P89LPC931FDH

Package
28TSSOP
Device Core
80C51
Family Name
89LP
Maximum Speed
18 MHz
Ram Size
256 Byte
Program Memory Size
8 KB
Operating Supply Voltage
2.5|3.3 V
Data Bus Width
8 Bit
Program Memory Type
Flash
Number Of Programmable I/os
26
Interface Type
I2C/SPI/UART
Operating Temperature
-40 to 85 °C
Number Of Timers
2

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Product data
8.24.1 General description
8.24.2 Features
8.24.3 Using Flash as data storage
8.24.4 ISP and IAP capabilities of the P89LPC930/931
8.24 Flash program memory
The P89LPC930/931 Flash memory provides in-circuit electrical erasure and
programming. The Flash can be read, erased, or written as bytes. The Sector and
Page Erase functions can erase any Flash sector (1 kB) or page (64 bytes). The Chip
Erase operation will erase the entire program memory. In-System Programming and
standard parallel programming are both available. On-chip erase and write timing
generation contribute to a user-friendly programming interface. The P89LPC930/931
Flash reliably stores memory contents even after more than 100,000 erase and
program cycles. The cell is designed to optimize the erase and programming
mechanisms. The P89LPC930/931 uses V
Program/Erase algorithms.
The Flash code memory array of this device supports individual byte erasing and
programming. Any byte in the code memory array may be read using the MOVC
instruction, provided that the sector containing the byte has not been secured (a
MOVC instruction is not allowed to read code memory contents of a secured sector).
Thus any byte in a non-secured sector may be used for non-volatile data storage.
Flash organization:
sectors. Each sector can be further divided into 64-byte pages. In addition to sector
erase and page erase, a 64-byte page register is included which allows from 1 to 64
bytes of a given page to be programmed at the same time, substantially reducing
overall programming time. An In-Application Programming (IAP) interface is provided
to allow the end user’s application to erase and reprogram the user code memory. In
Byte-erase allowing code memory to be used for data storage.
Internal fixed boot ROM, containing low-level In-Application Programming (IAP)
routines.
User programs can call these routines to perform In-Application Programming
(IAP).
Default loader providing In-System Programming via the serial port, located in
upper end of user program memory.
Boot vector allows user-provided Flash loader code to reside anywhere in the
Flash memory space, providing flexibility to the user.
Programming and erase over the full operating voltage range.
Programming/Erase using ISP/IAP.
Any flash program/erase operation in 2 ms.
Parallel programming with industry-standard commercial programmers.
Programmable security for the code in the Flash for each sector.
More than 100,000 typical erase/program cycles for each byte.
10 year minimum data retention.
Rev. 05 — 15 December 2004
The P89LPC930/931 program memory consists of eight 1 KB
8-bit microcontrollers with two-clock 80C51 core
DD
as the supply voltage to perform the
P89LPC930/931
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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