STM32F105V8 STMicroelectronics, STM32F105V8 Datasheet - Page 45

• Manufacturer Part Number: STM32F105V8
• Description: Mainstream Connectivity line, ARM Cortex-M3 MCU with 64 Kbytes Flash, 72 MHz CPU, CAN, USB 2.0 OTG
• Manufacturer: STMicroelectronics

Specifications of STM32F105V8

• Core: ARM 32-bit Cortex™-M3 CPU
• Conversion Range: 0 to 3.6 V
• Dma: 12-channel DMA controller
• Supported Peripherals: timers, ADCs, DAC, I2Ss, SPIs, I2Cs and USARTs
• Systick Timer: a 24-bit downcounter
• 10/100 Ethernet Mac With Dedicated Dma And Sram (4 Kbytes): IEEE1588 hardware support, MII/RMII available on all packages

STM32F105xx, STM32F107xx
5.3.6
External clock source characteristics
High-speed external user clock generated from an external source
The characteristics given in
external clock source, and under ambient temperature and supply voltage conditions
summarized in
Table 20.
1. Guaranteed by design, not tested in production.
Low-speed external user clock generated from an external source
The characteristics given in
external clock source, and under ambient temperature and supply voltage conditions
summarized in
Table 21.
1. Guaranteed by design, not tested in production.
DuCy
DuCy
Symbol
Symbol
C
C
f
f
t
t
t
t
HSE_ext
V
LSE_ext
V
V
t
t
V
t
t
w(HSE)
w(HSE)
w(LSE)
w(LSE)
r(HSE)
f(HSE)
r(LSE)
f(LSE)
in(HSE)
in(LSE)
HSEH
LSEH
HSEL
LSEL
I
I
L
L
(HSE)
(LSE)
User External clock source
frequency
OSC32_IN input pin high level
voltage
OSC32_IN input pin low level
voltage
OSC32_IN high or low time
OSC32_IN rise or fall time
OSC32_IN input capacitance
Duty cycle
OSC32_IN Input leakage current
External user clock source
frequency
OSC_IN input pin high level voltage
OSC_IN input pin low level voltage
OSC_IN high or low time
OSC_IN rise or fall time
OSC_IN input capacitance
Duty cycle
OSC_IN Input leakage current
High-speed external user clock characteristics
Low-speed external user clock characteristics
Table
Table
(1)
(1)
9.
9.
Parameter
Parameter
Table 20
Table 21
Doc ID 15274 Rev 6
(1)
(1)
(1)
(1)
(1)
result from tests performed using an high-speed
result from tests performed using an low-speed
(1)
V
SS
Conditions
V
≤ V
SS
Conditions
≤ V
IN
≤ V
IN
≤ V
DD
DD
0.7V
V
Min
450
0.7V
30
SS
Min
V
DD
45
1
5
Electrical characteristics
SS
DD
32.768
Typ
Typ
5
8
5
0.3V
0.3V
1000
Max
V
Max
V
±1
50
70
50
20
55
±1
DD
DD
DD
DD
45/104
MHz
Unit
Unit
kHz
pF
µA
pF
µA
ns
ns
%
%
V
V