STM32L162QD STMicroelectronics, STM32L162QD Datasheet - Page 87

• Manufacturer Part Number: STM32L162QD
• Description: Ultra-low-power ARM Cortex-M3 MCU with 384 Kbytes Flash, 32 MHz CPU, LCD, USB, 3xOp-amp, AES
• Manufacturer: STMicroelectronics

Specifications of STM32L162QD

• Operating Power Supply Range: 1.65 V to 3.6 V (without BOR) or 1.8 V to 3.6 V
• 7 Modes: Sleep, Low-power run (11 μA at 32 kHz), Low-power sleep (4.4 μA), Stop with RTC, Stop (650 nA), Standby with RTC, Standby (300 nA)
• Ultralow Leakage Per I/o: 50 nA max
• Fast Wakeup Time From Stop: 8 μs
• Core: ARM 32-bit Cortex™-M3 CPU
• Dma: 12-channel DMA controller
• 11 Timers: one 32-bit and six 16-bit general-purpose timers, two 16-bit basic timers, two watchdog timers (independent and window)

STM32L162VD, STM32L162ZD, STM32L162QD, STM32L162RD
6.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 42.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
●
●
V
V
Symbol
FESD
EFTB
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
EMS characteristics
Parameter
Table
Doc ID 022268 Rev 2
42. They are based on the EMS levels and classes
DD
and V
SS
V
f
conforms to IEC 61000-4-2
V
f
conforms to IEC 61000-4-4
HCLK
HCLK
DD
DD
= 3.3 V, LQFP100, T
= 3.3 V, LQFP100, T
= 32 MHz
= 32 MHz
Conditions
Electrical characteristics
A
A
= +25 °C,
= +25 °C,
DD
and
Level/
Class
87/124
2B
4A