STM32L162QD STMicroelectronics, STM32L162QD Datasheet - Page 88

• Manufacturer Part Number: STM32L162QD
• Description: Ultra-low-power ARM Cortex-M3 MCU with 384 Kbytes Flash, 32 MHz CPU, LCD, USB, 3xOp-amp, AES
• Manufacturer: STMicroelectronics

Specifications of STM32L162QD

• Operating Power Supply Range: 1.65 V to 3.6 V (without BOR) or 1.8 V to 3.6 V
• 7 Modes: Sleep, Low-power run (11 μA at 32 kHz), Low-power sleep (4.4 μA), Stop with RTC, Stop (650 nA), Standby with RTC, Standby (300 nA)
• Ultralow Leakage Per I/o: 50 nA max
• Fast Wakeup Time From Stop: 8 μs
• Core: ARM 32-bit Cortex™-M3 CPU
• Dma: 12-channel DMA controller
• 11 Timers: one 32-bit and six 16-bit general-purpose timers, two 16-bit basic timers, two watchdog timers (independent and window)

Electrical characteristics
6.3.11
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Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 43.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 44.
1. Based on characterization results, not tested in production.
V
V
Symbol Parameter
Symbol
ESD(HBM)
ESD(CDM)
S
EMI
Peak level
Electrostatic discharge
voltage (human body model)
Electrostatic discharge
voltage (charge device model)
EMI characteristics
ESD absolute maximum ratings
Ratings
V
T
LQFP100 package
compliant with IEC
61967-2
A
DD
= 25 °C,
STM32L162VD, STM32L162ZD, STM32L162QD, STM32L162RD
Conditions
= 3.3 V,
Doc ID 022268 Rev 2
T
to JESD22-A114
T
to JESD22-C101
A
A
0.1 to 30 MHz
30 to 130 MHz
130 MHz to 1GHz
SAE EMI Level
= +25 °C, conforming
= +25 °C, conforming
frequency band
Conditions
Monitored
range 3
voltage
Max vs. frequency range
4 MHz
2.5
18
15
Class Maximum value
3
2
II
range 2
16 MHz
voltage
-6
5
4
2
2000
500
range 1
32 MHz
voltage
-7
-5
-7
1
(1)
dBµV
Unit
Unit
-
V