ST72324BJ6 STMicroelectronics, ST72324BJ6 Datasheet - Page 154

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ST72324BJ6

Manufacturer Part Number
ST72324BJ6
Description
5V RANGE 8-BIT MCU WITH 8 TO 32K FLASH/ROM, 10-BIT ADC, 4 TIMERS, SPI, SCI INTERFACE
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST72324BJ6

Hdflash Endurance
1 kcycle at 55 °C, data retention 40 years at 85 °C
Clock Sources
crystal/ceramic resonator oscillators, int. RC osc. and ext. clock input
4 Power Saving Modes
Slow, Wait, Active-halt, and Halt
Electrical characteristics
12.7.2
154/193
Flash memory
Table 101. Dual voltage HDFlash memory
1. Data based on characterization results, not tested in production.
2. V
3. Data based on simulation results, not tested in production.
Symbol
T
T
ERASE
N
f
t
t
V
PROG
reasons.
CPU
I
I
VPP
RET
DD
PP
RW
PP
PP
must be applied only during the programming or erasing operation and not permanently for reliability
Operating frequency
Programming voltage
Supply current
V
Internal V
Data retention
Write erase cycles
Programming or erasing
temperature range
PP
current
PP
Parameter
(3)
stabilization time
(3)
(2)
Read mode
Write/Erase mode
4.5 V < V
Write/Erase
Read (V
Write/Erase
T
T
Conditions
T
A
A
T
T
A
A
A
= 105 °C
= 125 °C
PP
= 85 °C
=85 °C
=55 °C
DD
= 12 V)
< 5.5 V
Min
1000
11.4
100
-40
40
15
0
1
7
(1)
Typ
<10
10
25
Max
12.6
ST72324Bxx
200
30
85
8
8
(1)
cycles
cycles
years
MHz
Unit
mA
µA
µA
°C
µs
V

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