FDC8878 Fairchild Semiconductor, FDC8878 Datasheet
FDC8878
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FDC8878 Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .888 FDC8878 ©2012 Fairchild Semiconductor Corporation FDC8878 Rev.C2 ® MOSFET General Description = 8.0 A This N-Channel D Semiconductor‘s advanced Power Trench = 7 been optimized for r ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2 N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2012 Fairchild Semiconductor Corporation FDC8878 Rev. °C unless otherwise noted J Test Conditions = 250 μA, V ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDC8878 Rev. 25°C unless otherwise noted J 2 4.5 V 2 1.5 1.0 μ s 0.5 0.9 1.2 1 100 125 150 ...
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... MAX RATED 175 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDC8878 Rev. 25°C unless otherwise noted J 2000 1000 100 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. ©2012 Fairchild Semiconductor Corporation FDC8878 Rev. 25°C unless otherwise noted J SINGLE PULSE 175 C/W θ RECTANGULAR PULSE DURATION (s) Junction-to-Ambient Transient Thermal Response Curve ...
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... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDC8878 Rev.C2 6 www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDC8878 Rev.C2 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...