FDC8878 Fairchild Semiconductor, FDC8878 Datasheet - Page 4

• Manufacturer Part Number: FDC8878
• Manufacturer: Fairchild Semiconductor

FDC8878 Rev.C2
©2012 Fairchild Semiconductor Corporation
Typical Characteristics
0.01
100
20
10
0.1
10
0.001
10
1
Figure 7.
8
6
4
2
0
1
0.01
0
SINGLE PULSE
T
R
T
Figure 9.
Figure 11.
J
A
θ
I
JA
D
= MAX RATED
= 25
THIS AREA IS
LIMITED BY r
= 8 A
= 175
0.01
o
Switching Capability
V
C
3
DS
Gate Charge Characteristics
t
AV
o
0.1
C/W
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
, TIME IN AVALANCHE (ms)
Unclamped Inductive
Q
g
Forward Bias Safe
V
, GATE CHARGE (nC)
DS(on)
DD
0.1
T
J
6
= 10 V
= 125
V
DD
1
T
= 20 V
o
J
C
= 25
T
1
J
9
= 25°C unless otherwise noted
o
V
T
C
DD
J
= 100
= 15 V
10
10
12
o
C
100 ms
1 s
10 s
100 us
1 ms
10 ms
DC
100
100
15
4
Figure 10.
1000
2000
1000
10
100
100
0.1
8
6
4
2
0
10
10
25
1
10
0.1
Figure 12.
-4
f = 1 MHz
V
Figure 8.
R
GS
θ
JA
= 0 V
vs. Ambient Temperature
10
Maximum Continous Drain Current
= 78
50
-3
V
T
DS
A
Power Dissipation
to Source Voltage
, AMBIENT
o
, DRAIN TO SOURCE VOLTAGE (V)
C/W
Single Pulse Maximum
10
Capacitance vs Drain
V
GS
-2
t, PULSE WIDTH (s)
= 4.5 V
75
10
1
TEMPERATURE (
-1
V
GS
100
= 10 V
1
SINGLE PULSE
R
T
A
θ
JA
= 25
= 175
10
o
o
125
C )
C
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10
o
C/W
100
C
C
C
rss
oss
iss
150
1000
30