FDC8878 Fairchild Semiconductor, FDC8878 Datasheet - Page 2

• Manufacturer Part Number: FDC8878
• Manufacturer: Fairchild Semiconductor

FDC8878 Rev.C2
©2012 Fairchild Semiconductor Corporation
NOTES:
1. R
R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
θJC
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
is guaranteed by design while R
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward V
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
θCA
Parameter
is determined by the user's board design.
a. 78 °C/W when mounted on
T
J
a 1 in
= 25 °C unless otherwise noted
2
pad of 2 oz copper
I
I
V
V
V
V
V
V
I
V
I
V
V
V
V
V
f = 1 MHz
D
D
F
D
DS
GS
DD
GS
GS
GS
GS
GS
GS
GS
GS
DD
DS
= 8.0 A, di/dt = 100 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 24 V, V
= 0 V, I
= 20 V, V
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
2
DS
Test Conditions
, I
S
D
D
D
= 8.0 A
D
D
GS
DS
GS
GEN
GS
D
= 8.0 A
= 8 A,
= 250 μA
= 8.0 A
= 8.0 A, T
= 7.5 A
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
V
I
D
DD
= 8 A
= 15 V
J
= 125 °C
(Note 2)
b.175 °C/W when mounted on
a minimum pad of 2 oz copper
Min
1.2
30
Typ
782
318
0.8
1.7
2.0
1.6
1.2
22
40
17
13
13
12
14
16
43
-5
7
6
2
2
6
1040
Max
425
www.fairchildsemi.com
1.2
100
3.0
12
10
30
10
18
35
14
60
16
18
21
9
1
mV/°C
mV/°C
Units
mΩ
nC
pF
nC
nC
nC
nC
μA
nA
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S