FDD8N50NZ Fairchild Semiconductor, FDD8N50NZ Datasheet

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FDD8N50NZ

Manufacturer Part Number
FDD8N50NZ
Description
This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet

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©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDD8N50NZ
N-Channel MOSFET
500V, 6.5A, 0.85Ω
Features
• R
• Low Gate Charge ( Typ. 14nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.77Ω ( Typ.) @ V
( Typ. 5pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
G
= 10V, I
S
D
T
= 3.25A
C
D-PAK
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
D
o
C)
C
C
= 25
= 100
1
o
C
o
Description
This N-Channel enhancement mode power field effect transistors
are produced using Fairchild's proprietary, planar stripe, DMOS
technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
G
-55 to +150
Ratings
Ratings
D
D
S
S
UniFET-II
62.5
500
±25
287
300
6.5
3.9
0.7
6.5
1.4
26
90
10
9
August 2010
www.fairchildsemi.com
switching
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDD8N50NZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FDD8N50NZ Rev. A Description = 3.25A This N-Channel enhancement mode power field effect transistors D are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... DD G ≤ 6.5A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDD8N50NZ Rev. A Package Reel Size D-PAK 380mm unless otherwise noted C Test Conditions I = 250μ ...

Page 3

... C iss = oss = rss = C gd oss 900 C iss 600 300 C rss 0 0 Drain-Source Voltage [V] DS FDD8N50NZ Rev. A Figure 2. Transfer Characteristics *Notes: 1. 250 s Pulse Test μ 0 Figure 4. Body Diode Forward Voltage 100 ...

Page 4

... Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on) 0.1 *Notes Single Pulse 0. Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDD8N50NZ Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 250 A μ D 0.0 50 100 150 7 μ 100 s μ ...

Page 5

... FDD8N50NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD8N50NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions FDD8N50NZ Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD8N50NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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