FDD8N50NZ Fairchild Semiconductor, FDD8N50NZ Datasheet - Page 3

• Manufacturer Part Number: FDD8N50NZ
• Description: This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
• Manufacturer: Fairchild Semiconductor

FDD8N50NZ Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1200
0.03
Figure 1. On-Region Characteristics
900
600
300
0.1
2.0
1.6
1.2
0.8
0.4
30
10
1
0.03
0
0.1
0
V
GS
=
15.0 V
10.0 V
C
0.1
Drain Current and Gate Voltage
3
C
V
C
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
oss
iss
DS
rss
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
6
V
1
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
GS
= 10V
9
1
*Notes:
1. 250
2. T
V
*Note: T
12
GS
C
= 25
μ
(
= 20V
C ds = shorted
s Pulse Test
*Note:
o
1. V
2. f = 1MHz
C
10
C
15
= 25
GS
10
= 0V
o
C
)
20
18
30
3
100
0.1
30
10
10
10
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
1
1
8
6
4
2
0
0.4
2
0
V
SD
0.8
3
, Body Diode Forward Voltage [V]
V
Variation vs. Source Current
and Temperature
Q
4
GS
150
g
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
150
V
V
V
o
C
DS
DS
DS
o
1.2
C
6
= 100V
= 250V
= 400V
25
6
o
C
*Notes:
1.6
25
1. V
2. 250
9
*Notes:
1. V
2. 250
-55
o
C
*Note: I
DS
o
GS
C
μ
= 20V
s Pulse Test
μ
= 0V
s Pulse Test
8
2.0
12
D
= 6.5A
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2.4
10
15