FDD8N50NZ Fairchild Semiconductor, FDD8N50NZ Datasheet - Page 4

• Manufacturer Part Number: FDD8N50NZ
• Description: This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
• Manufacturer: Fairchild Semiconductor

FDD8N50NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
0.1
50
10
-100
1
1
Operation in This Area
is Limited by R
vs. Temperature
-50
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
DS(on)
0.01
0.1
0
2
1
*Notes:
10
1. T
2. T
3. Single Pulse
0.05
0.5
0.2
0.02
0.1
0.01
Single pulse
-5
C
J
= 150
= 25
Figure 11. Transient Thermal Response Curve
50
o
o
C
100
C
*Notes:
10ms
DC
1ms
10
[
1. V
2. I
100
o
100
C
-4
D
GS
]
μ
= 250
s
= 0V
30
μ
Rectangular Pulse Duration [sec]
μ
s
A
1000
150
10
(Continued)
-3
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
7.0
5.6
4.2
2.8
1.4
0.0
10
Figure 8. On-Resistance Variation
-100
Figure 10. Maximum Drain Current
25
-2
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
JM
-50
50
JC
T
T
J
- T
C
(t) = 1.4
, Junction Temperature
vs. Temperature
, Case Temperature
10
C
vs. Case Temperature
= P
t
-1
1
t
2
o
DM
C/W Max.
75
0
* Z
1
θ
/t
JC
2
(t)
100
50
1
[
o
C
*Notes:
[
]
1. V
2. I
o
100
125
C
D
]
GS
= 3.25A
= 10V
www.fairchildsemi.com
150
150