FDD6N50F Fairchild Semiconductor, FDD6N50F Datasheet

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FDD6N50F

Manufacturer Part Number
FDD6N50F
Description
These N-Channel enhancement mode power field effect transistors are produced using Failchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet

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©2012 Fairchild Semiconductor Corporation
FDD6N50F / FDU6N50F Rev.C0
MOSFET Maximum Ratings
Thermal Characteristics
*When mounted on the minimum pad size recommended (PCB Mount)
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDD6N50F / FDU6N50F
N-Channel MOSFET
500V, 5.5A, 1.15Ω
Features
• R
• Low gate charge ( Typ. 15nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.95Ω ( Typ.)@ V
( Typ. 6.3pF)
G
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
S
FDD Series
D-PAK
GS
= 10V, I
D
D
= 2.75A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
(T
- Derate above 25
- Pulsed
C
o
C unless otherwise noted*
= 25
G
D S
o
C)
C
C
FDU Series
= 25
= 100
I-PAK
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
-55 to +150
Ratings
Ratings
0.71
500
±30
270
300
5.5
2.4
5.5
8.9
S
22
20
89
1.4
D
83
UniFET
January 2012
www.fairchildsemi.com
switching
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
tm
TM

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FDD6N50F Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA *When mounted on the minimum pad size recommended (PCB Mount) ©2012 Fairchild Semiconductor Corporation FDD6N50F / FDU6N50F Rev.C0 Description = 2.75A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... DD G ≤ 5.5A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDD6N50F / FDU6N50F Rev. unless otherwise noted C Package Reel Size D-PAK 380mm D-PAK ...

Page 3

... C iss = oss = oss C rss = C gd 1200 C iss 900 600 C rss 300 0 0 Drain-Source Voltage [V] DS FDD6N50F / FDU6N50F Rev.C0 Figure 2. Transfer Characteristics *Notes: 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 100 = 20V GS o *Note: T ...

Page 4

... Figure 9. Maximum Drain Current vs. Case Temperature 6.0 4.8 3.6 2.4 1.2 0 Case Temperature C Figure 10. Transient Thermal Response Curve 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDD6N50F / FDU6N50F Rev.C0 (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes μ 250 A D 0.01 100 150 200 100 125 150 o [ ...

Page 5

... FDD6N50F / FDU6N50F Rev.C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD6N50F / FDU6N50F Rev.C0 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • ...

Page 7

... Mechanical Dimensions FDD6N50F / FDU6N50F Rev.C0 D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDD6N50F / FDU6N50F Rev.C0 I-PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD6N50F / FDU6N50F Rev.C0 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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