FDD6N50F Fairchild Semiconductor, FDD6N50F Datasheet - Page 3

• Manufacturer Part Number: FDD6N50F
• Description: These N-Channel enhancement mode power field effect transistors are produced using Failchild's proprietary, planar stripe, DMOS technology
• Manufacturer: Fairchild Semiconductor

FDD6N50F / FDU6N50F Rev.C0
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1500
1200
0.04
Figure 1. On-Region Characteristics
900
600
300
0.1
2.4
1.8
1.2
0.6
28
10
0
1
0.1
0.1
0
V
GS
C
C
=
oss
C
iss
rss
Drain Current and Gate Voltage
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
DS
DS
, Drain-Source Voltage [V]
4
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
V
GS
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
1
= 10V
V
8
GS
*Notes:
= 20V
1. 250
2. T
*Note: T
C
= 25
(
μ
C ds = shorted
s Pulse Test
12
*Note:
o
1. V
2. f = 1MHz
C
10
J
= 25
GS
10
= 0V
o
C
)
20
30
16
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
100
Figure 6. Gate Charge Characteristics
0.1
10
10
20
10
1
1
8
6
4
2
0
0.0
5
0
V
SD
150
Variation vs. Source Current
6
and Temperature
, Body Diode Forward Voltage [V]
V
0.5
Q
o
4
GS
150
C
g
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
V
V
V
o
DS
DS
DS
C
= 100V
= 250V
= 400V
7
25
1.0
8
o
C
*Notes:
1. V
2. 250
8
*Notes:
1. V
2. 250
25
*Note: I
DS
o
GS
C
μ
= 20V
μ
s Pulse Test
1.5
12
= 0V
s Pulse Test
9
D
= 6A
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2.0
10
16