FDD6N50F Fairchild Semiconductor, FDD6N50F Datasheet - Page 4

• Manufacturer Part Number: FDD6N50F
• Description: These N-Channel enhancement mode power field effect transistors are produced using Failchild's proprietary, planar stripe, DMOS technology
• Manufacturer: Fairchild Semiconductor

FDD6N50F / FDU6N50F Rev.C0
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
6.0
4.8
3.6
2.4
1.2
0.0
-100
25
vs. Temperature
-50
vs. Case Temperature
T
50
T
J
C
, Junction Temperature
, Case Temperature
1E-3
0
0.01
0.1
1
75
3
10
Figure 10. Transient Thermal Response Curve
0.5
0.05
0.02
0.01
Single pulse
0.2
0.1
-5
50
100
100
10
[
o
*Notes:
C
-4
1. V
2. I
[
]
o
C
125
D
150
]
GS
= 250
= 0V
Rectangular Pulse Duration [sec]
μ
A
10
200
150
-3
(Continued)
10
-2
4
0.01
Figure 8. Maximum Safe Operating Area
0.1
10
50
1
1
10
Operation in This Area
is Limited by R
*Notes:
-1
P
1. Z
2. Duty Factor, D=t
3. T
DM
θ
JM
JC
- T
(t) = 1.4
V
DS
C
t
= P
, Drain-Source Voltage [V]
1
10
t
10
2
DS(on)
o
DM
0
C/W Max.
* Z
1
/t
θ
2
JC
(t)
*Notes:
1. T
2. T
3. Single Pulse
10
1
C
J
100
= 150
= 25
10ms
o
DC
o
100
C
C
1ms
μ
s
www.fairchildsemi.com
30
μ
s
1000