FQD2N80 Fairchild Semiconductor, FQD2N80 Datasheet

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FQD2N80

Manufacturer Part Number
FQD2N80
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2009 Fairchild Semiconductor International
FQD2N80 / FQU2N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 1.8A, 800V, R
• RoHS Compliant
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU Series
I-PAK
FQD2N80 / FQU2N80
DS(on)
Typ
--
--
--
-55 to +150
= 6.3
1.14
180
300
800
1.8
7.2
1.8
5.0
4.0
2.5
0.4
50
30
G
@V
!
!
Max
GS
110
2.5
50
January 2008
QFET
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
Rev. A2, January 2009
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQD2N80 Summary of contents

Page 1

... A = 25°C) C Parameter January 2008 ® QFET = 6 DS(on " " " " " " FQD2N80 / FQU2N80 Units 800 V 1.8 A 1. 180 mJ 1.8 A 5.0 mJ 4.0 V/ns 2 0.4 W/°C -55 to +150 °C 300 °C Typ Max Units -- 2 ...

Page 2

... ≤ 2.4A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2009 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...

Page 3

... C 300 oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor International 0 10 ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 0 10 ※ Note : T = 25℃ J ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2009 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2009 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2009 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) ©2009 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 Rev. A2, January 2009 ...

Page 8

... Mechanical Dimensions ©2009 Fairchild Semiconductor International I - PAK Dimensions in Millimeters Rev. A2, January 2009 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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