FQD2N80 Fairchild Semiconductor, FQD2N80 Datasheet - Page 3

• Manufacturer Part Number: FQD2N80
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor International
Typical Characteristics
700
600
500
400
300
200
100
10
10
10
12
10
-1
-2
8
6
4
2
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom : 5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
1
GS
V
V
DS
DS
, Drain-Source Voltage [V]
2
, Drain-Source Voltage [V]
V
I
10
10
D
GS
, Drain Current [A]
0
0
= 20V
V
GS
C
C
= 10V
C
3
iss
oss
rss
4
C
C
C
iss
oss
rss
= C
= C
※ Notes :
= C
10
10
1. 250μ s Pulse Test
2. T
gs
gd
※ Note : T
ds
1
1
+ C
+ C
C
= 25℃
gd
※ Notes :
gd
(C
1. V
2. f = 1 MHz
5
ds
= shorted)
GS
J
= 25℃
= 0 V
6
10
10
10
10
12
10
8
6
4
2
0
-1
-1
0
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
2
0.4
25
o
150
C
4
V
V
4
Q
o
150℃
and Temperature
C
GS
SD
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
V
V
DS
DS
DS
0.6
= 640V
= 400V
= 160V
6
6
25℃
-55
8
o
0.8
C
※ Notes :
10
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
1.0
= 50V
= 0V
D
12
= 2.4A
Rev. A2, January 2009
1.2
10
14