FQD2N80 Fairchild Semiconductor, FQD2N80 Datasheet - Page 4

• Manufacturer Part Number: FQD2N80
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor International
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
10
J
vs Temperature
DS
, Junction Temperature [
1
, Drain-Source Voltage [V]
0
Operation in This Area
is Limited by R
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
- 1
1 0
0
C
J
= 150
= 25
- 5
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
o
0 .2
0 .1
50
DS(on)
C
o
C
DC
10
10 ms
Figure 11. Transient Thermal Response Curve
2
100
1 ms
1 0
(Continued)
o
- 4
C]
s i n g l e p u ls e
100μ s
※ Notes :
1. V
2. I
t
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
10μ s
= 250 μ A
150
= 0 V
10
3
1 0
- 3
200
1 0
- 2
2.0
1.6
1.2
0.8
0.4
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c to r , D = t
3 . T
1 0
Figure 10. Maximum Drain Current
- 1
θ J C
J M
P
-50
DM
- T
( t) = 2 .5 ℃ /W M a x .
50
C
= P
vs Case Temperature
T
T
D M
J
t
vs Temperature
, Junction Temperature [
1
C
t
1 0
0
, Case Temperature [ ℃ ]
* Z
2
1
0
θ J C
/t
75
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 1.2 A
= 10 V
Rev. A2, January 2009
200
150