MT28F800B3 Micron Technology, MT28F800B3 Datasheet - Page 15

• Manufacturer Part Number: MT28F800B3
• Description: (MT28F008B3 / MT28F800B3) FLASH MEMORY
• Manufacturer: Micron Technology

DataSheet4U.com
www.DataSheet4U.com
DataSheet
NOTE: 1. Sequence may be repeated for additional BYTE or WORD WRITEs.
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
4
U
.com
SELF-TIMED WRITE SEQUENCE
2. Complete status check is not required. However, if SR3 = 1, further WRITEs are inhibited until the status register is
3. Device will be in status register read mode. To return to the array read mode, the FFh command must be issued.
4. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE
5. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER.
cleared.
or ERASE operations are allowed by the CEL.
(WORD OR BYTE WRITE)
WRITE Word or Byte
WRITE 40h or 10h
STATUS REGISTER
WRITE Complete
Complete Status
Check (optional)
V
Address/Data
PP
= 3.3V or 5V
SR7 = 1?
READ
Start
YES
2
3
NO
1
DataSheet4U.com
SMART 3 BOOT BLOCK FLASH MEMORY
15
COMPLETE WRITE STATUS-CHECK
Start (WRITE completed)
WRITE Successful
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SR3 = 0?
SR4 = 0?
YES
YES
SEQUENCE
NO
NO
V
BYTE/WORD WRITE Error
PP
Error
4, 5
©2001, Micron Technology, Inc.
8Mb
5