MT28F800B3 Micron Technology, MT28F800B3 Datasheet - Page 23

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MT28F800B3

Manufacturer Part Number
MT28F800B3
Description
(MT28F008B3 / MT28F800B3) FLASH MEMORY
Manufacturer
Micron Technology
Datasheet

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DataSheet4U.com
www.DataSheet4U.com
DataSheet
RECOMMENDED DC WRITE/ERASE CONDITIONS
Commercial Temperature (0ºC
WRITE/ERASE CURRENT DRAIN
Commercial Temperature (0ºC
NOTE: 1. WRITE operations are tested at V
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
4
PARAMETER/CONDITION
WORD WRITE CURRENT: V
WORD WRITE CURRENT: V
BYTE WRITE CURRENT: V
BYTE WRITE CURRENT: V
ERASE CURRENT: V
ERASE CURRENT: V
ERASE SUSPEND CURRENT: V
(ERASE suspended)
ERASE SUSPEND CURRENT: V
(ERASE suspended)
PARAMETER/CONDITION
V
V
V
Boot block unlock voltage
V
U
PP
PP
PP
CC
.com
WRITE/ERASE lockout voltage
voltage during WRITE/ERASE operation
voltage during WRITE/ERASE operation
WRITE/ERASE lockout voltage
2. Absolute WRITE/ERASE protection when V
3. When 3.3V V
4. All currents are in RMS unless otherwise noted.
5. Applies to MT28F800B3 only.
6. Applies to MT28F008B3 and MT28F800B3 with BYTE# = LOW.
7. Parameter is specified when device is not accessed. Actual current draw will be I
executed while the device is in erase suspend mode.
CC
PP
CC
SUPPLY
SUPPLY
and V
CC
PP
CC
PP
PP
SUPPLY
SUPPLY
SUPPLY
CC
PP
SUPPLY
are used, V
SUPPLY
SUPPLY
T
T
A
A
+70ºC) and Extended Temperature (-40ºC
+70ºC) and Extended Temperature (-40ºC - T
PP
CC
voltages equal to or less than the previous ERASE.
4
cannot exceed V
PP
DataSheet4U.com
SMART 3 BOOT BLOCK FLASH MEMORY
V
PPLK
.
23
PP
by more than 500mV during WRITE and ERASE operations.
1
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
I
I
I
I
I
I
CC
I
SYMBOL
CC
CC
CC
PP
PP
PP
PP
10
V
V
7
3
8
4
9
5
6
V
V
V
PPH
PPH
PPLK
LKO
HH
1
2
3.3V V
CC 10
MAX
T
A
200
A
20
20
20
20
25
25
8
plus read current if a READ is
- +85ºC); V
MIN
3.0
4.5
10
2
+85ºC); V
PP
5V V
MAX
MAX UNITS NOTES
200
12.6
20
20
20
20
25
30
10
1.5
3.6
5.5
CC
PP
CC
= +3.3V ±0.3V
= +3.3V ±0.3V
UNITS NOTES
©2001, Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
mA
µA
V
V
V
V
V
8Mb
2
3
5
5
6
6
7

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