MT28F800B3 Micron Technology, MT28F800B3 Datasheet - Page 19

• Manufacturer Part Number: MT28F800B3
• Description: (MT28F008B3 / MT28F800B3) FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
CAPACITANCE
(T
READ AND STANDBY CURRENT DRAIN
Commercial Temperature (0ºC
NOTE: 1. V
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
PARAMETER/CONDITION
Input Capacitance
Output Capacitance
PARAMETER/CONDITION
READ CURRENT: WORD-WIDE
(CE#
Other inputs
READ CURRENT: BYTE-WIDE
(CE#
Other inputs
STANDBY CURRENT: TTL INPUT LEVELS
V
(CE# = RP# = V
STANDBY CURRENT: CMOS INPUT LEVELS
V
(CE# = RP# = V
DEEP POWER-DOWN CURRENT: V
(RP# = V
STANDBY OR READ CURRENT: V
(V
DEEP POWER-DOWN CURRENT: V
(RP# = V
4
A
CC
CC
U
PP
= 25ºC; f = 1 MHz)
power supply standby current
power supply standby current
.com
5.5V)
2. I
3. I
0.2V; OE#
0.2V; OE#
SS
SS
CC
CC
CC
±0.2V)
±0.2V)
is dependent on cycle rates.
is dependent on output loading. Specified values are obtained with the outputs open.
= MAX V
IH
CC
0.2V or
0.2V or
; Other inputs = V
- 0.2V)
V
V
CC
CC
CC
during I
- 0.2V; f = 5 MHz;
- 0.2V; f = 5 MHz;
V
V
CC
CC
- 0.2V; RP#
- 0.2V; RP# = V
CC
tests.
PP
T
A
CC
PP
IL
SUPPLY
or V
SUPPLY
SUPPLY
+70ºC) and Extended Temperature (-40ºC
IH
)
V
CC
CC
- 0.2V)
- 0.2V)
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SMART 3 BOOT BLOCK FLASH MEMORY
1
19
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
I
I
I
I
I
I
I
CC
CC
CC
CC
CC
PP
PP
SYMBOL
1
2
1
2
3
4
6
C
C
O
I
T
A
+85ºC)
MAX
MAX
12
100
±15
9
15
15
2
8
5
UNITS
p F
pF
UNITS NOTES
©2001, Micron Technology, Inc.
mA
mA
mA
µA
µA
µA
µA
8Mb
NOTES
2, 3
2, 3