MT28F800B3 Micron Technology, MT28F800B3 Datasheet - Page 20

• Manufacturer Part Number: MT28F800B3
• Description: (MT28F008B3 / MT28F800B3) FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
READ TIMING PARAMETERS
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
Commercial Temperature (0ºC
NOTE: 1. Measurements tested under AC Test Conditions.
AC TEST CONDITIONS
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
4
Input pulse levels ...................................................... 0V to 3V
Input rise and fall times ................................................ <10ns
Input timing reference level ........................................... 1.5V
Output timing reference level ........................................ 1.5V
Output load ................................... 1 TTL gate and C
AC CHARACTERISTICS
PARAMETER
READ cycle time
Access time from CE#
Access time from OE#
Access time from address
RP# HIGH to output valid delay
OE# or CE# HIGH to output in High-Z
Output hold time from OE#, CE# or address change
RP# LOW pulse width
U
.com
2. OE# may be delayed by
t
ACE minus
T
A
+70ºC) and Extended Temperature (-40ºC
t
AOE after CE# falls before
L
= 50pF
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SMART 3 BOOT BLOCK FLASH MEMORY
20
t
ACE is affected.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
t
t
t
RWH
t
t
AOE
t
ACE
t
t
OD
OH
AA
RC
RP
T
A
MIN
150
90
0
+85ºC); V
-9/-9 ET
1,000
MAX
90
40
90
25
CC
= +3.3V ±0.3V
©2001, Micron Technology, Inc.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
8Mb
1
NOTES
2
2