MT28F800B3 Micron Technology, MT28F800B3 Datasheet - Page 24

• Manufacturer Part Number: MT28F800B3
• Description: (MT28F008B3 / MT28F800B3) FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS:
WE# (CE#)-CONTROLLED WRITES
Commercial Temperature (0ºC
WORD/BYTE WRITE AND ERASE DURATION CHARACTERISTICS
NOTE: 1. Measured with V
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
4
AC CHARACTERISTICS
PARAMETER
WRITE cycle time
WE# (CE#) HIGH pulse width
WE# (CE#) pulse width
Address setup time to WE# (CE#) HIGH
Address hold time from WE# (CE#) HIGH
Data setup time to WE# (CE#) HIGH
Data hold time from WE# (CE#) HIGH
CE# (WE#) setup time to WE# (CE#) LOW
CE# (WE#) hold time from WE# (CE#) HIGH
V
V
RP# HIGH to WE# (CE#) LOW delay
RP# at V
WRITE duration (WORD or BYTE WRITE)
Boot BLOCK ERASE duration
Parameter BLOCK ERASE duration
Main BLOCK ERASE duration
WE# (CE#) HIGH to busy status (SR7 = 0)
V
RP# at V
Boot block relock delay time
PARAMETER
Boot/parameter BLOCK ERASE time
Main BLOCK ERASE time
Main BLOCK WRITE time (byte mode)
Main BLOCK WRITE time (word mode)
PP
PP
PP
U
setup time to WE# (CE#) HIGH
setup time to WE# (CE#) HIGH
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hold time from status data valid
2. Measured with V
3. RP# should be held at V
4. Polling status register before
5. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
6.
7. Typical values measured at T
8. Assumes no system overhead.
9. Typical WRITE times use checkerboard data pattern.
HH
HH
t
REL is required to relock boot block after WRITE or ERASE to boot block.
or WP# HIGH setup time to WE# (CE#) HIGH
or WP# HIGH hold time from status data valid
PP
PP
= V
= V
PPH 1
PPH 2
HH
T
or WP# held HIGH until boot block WRITE or ERASE is complete.
= 3.3V.
= 5V.
A
A
t
WB is met may falsely indicate WRITE or ERASE completion.
= +25ºC.
+70ºC) and Extended Temperature (-40ºC
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SMART 3 BOOT BLOCK FLASH MEMORY
24
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WPH (
t
t
t
SYMBOL
CH (
WP (
CS (
t
t
t
t
TYP MAX TYP MAX UNITS NOTES
t
t
WED1
WED2
WED3
WED4
0.5
2.8
1.5
1.5
t
t
t
3.3V V
t
t
VPS1
VPS2
t
t
t
RHH
t
t
RHS
VPH
t
REL
WC
WB
AH
DH
AS
DS
RS
t
t
WS)
WH)
t
t
CPH)
CP)
14
T
PP
7
–
–
A
1,000
MIN
200
100
100
100
100
500
200
90
20
50
50
50
0
0
0
0
2
0
0
+85ºC); V
-9/-9 ET
0.4
1.5
1
1
5V V
MAX
100
PP
14
7
–
–
CC
= +3.3V ±0.3V
©2001, Micron Technology, Inc.
UNITS
ms
ms
ms
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
s
s
8Mb
7, 8, 9
7, 8, 9
NOTES
1
2
3
5
5
5
5
4
5
3
6
7
7