MT28F800B3 Micron Technology, MT28F800B3 Datasheet - Page 30

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MT28F800B3

Manufacturer Part Number
MT28F800B3
Description
(MT28F008B3 / MT28F800B3) FLASH MEMORY
Manufacturer
Micron Technology
Datasheet

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DataSheet
REVISION HISTORY
Rev. 3, Pub. 10/01 ................................................................................................................................................... 10/01
Rev. 2 ......................................................................................................................................................................................... 3/01
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
4
U
• Updated input capacitance spec
• Changed access time to 90ns
• Changed to 0.18µm process
• 12V V
• 10V V
• V
• AC test output load C
• Typical main BLOCK ERASE time changed to 1.5s from 1s
• Typical main BLOCK WRITE time (byte mode) changed to 1s from 0.5s
• Typical main BLOCK WRITE time (word mode) changed to 1s from 0.5s
• MT28F800B3 only available in WG and SG packages
• MT28F008B3 only available in VG package
• Added 80ns access time for commercial and extended temperature ranges
.com
t
t
RWH changed to 1µs from 800ns
AH changed to 10ns from 0ns
OH
PP
V
HH
CC
no longer supported
- 0.2V
12V
L
changed to 50pF
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SMART 3 BOOT BLOCK FLASH MEMORY
30
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
8Mb

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