IRF650

Manufacturer Part NumberIRF650
Description200V N-Channel MOSFET
ManufacturerFairchild Semiconductor
IRF650 datasheet
 
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IRF650B / IRFS650B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
TO-220
G
D
S
IRF Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
- Continuous (T
Drain Current
D
- Continuous (T
I
Drain Current
- Pulsed
DM
V
Gate-Source Voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation (T
D
- Derate above 25°C
T
, T
Operating and Storage Temperature Range
J
STG
Maximum lead temperature for soldering purposes,
T
L
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case Max.
JC
R
Thermal Resistance, Case-to-Sink Typ.
CS
R
Thermal Resistance, Junction-to-Ambient Max
JA
©2002 Fairchild Semiconductor Corporation
Features
• 28A, 200V, R
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
G
D
S
IRFS Series
T
= 25°C unless otherwise noted
C
Parameter
= 25°C)
C
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 25°C)
C
Parameter
= 0.085
@V
= 10 V
DS(on)
GS
D
G
S
IRF650B
IRFS650B
Units
200
V
28
28 *
A
17.7
17.7 *
A
112
112
A
30
V
600
mJ
28
A
15.6
mJ
5.5
V/ns
156
50
W
1.25
0.4
W/°C
-55 to +150
°C
300
°C
IRF650B
IRFS650B
Units
0.8
2.51
°C/W
0.5
--
°C/W
62.5
62.5
°C/W
Rev. A1, December 2002

IRF650 Summary of contents

  • Page 1

    ... IRF650B / IRFS650B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode ...

  • Page 2

    ... ≤ 32A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...

  • Page 3

    ... Drain Current and Gate Voltage 8000 6000 C iss 4000 C oss C 2000 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation 150 ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ...

  • Page 4

    ... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for IRF650B 100 , Case Temperature [ ℃ Figure 10. Maximum Drain Current vs Case Temperature ©2002 Fairchild Semiconductor Corporation (Continued) 3 ...

  • Page 5

    ... Typical Characteristics Figure 11. Transient Thermal Response Curve for IRF650B Figure 11. Transient Thermal Response Curve for IRFS650B © ...

  • Page 6

    ... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

  • Page 7

    ... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

  • Page 8

    ... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2002 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, December 2002 ...

  • Page 9

    ... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2002 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A1, December 2002 ...

  • Page 10

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...