IRF750A Fairchild Semiconductor, IRF750A Datasheet - Page 2

• Manufacturer Part Number: IRF750A
• Description: Advanced Power MOSFET
• Manufacturer: Fairchild Semiconductor

IRF750A
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
(1) Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
(2) L=9mH, I
(3) I
(4) Pulse Test : Pulse Width = 250 s, Duty Cycle
(5) Essentially Independent of Operating Temperature
R
BV
BV/ T
V
t
t
V
C
I
I
C
GS(th)
C
Q
Q
I
Q
DS(on)
d(on)
d(off)
Q
GSS
DSS
g
I
SM
t
t
t
SD
oss
S
rr
DSS
iss
rss
fs
r
f
gs
gd
rr
SD
g
J
17A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=15A, V
250A/ s, V
DD
Characteristic
Characteristic
=50V, R
DD
G
=27 , Starting T
BV
DSS
(T
, Starting T
C
=25 C unless otherwise specified)
(1)
(4)
J
2%
=25 C
Min.
Min.
J
400
2.0
=25 C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2140
Typ.
0.46
Typ.
11.1
51.5
4.85
305
134
100
101
385
20
22
32
14
--
--
--
--
--
--
--
--
--
--
2780
Max. Units
Max. Units
-100
350
155
210
131
100
100
1.5
4.0
0.3
50
55
75
10
15
60
--
--
--
--
--
--
--
V/ C
nA
nC
pF
ns
ns
A
V
V
V
A
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
=250 A
=17A
F
=25 C,I
=25 C,I
/dt=100A/ s
=6.2
=0V,I
=5V,I
=30V
=-30V
=400V
=320V,T
=10V,I
=50V,I
=0V,V
=200V,I
=320V,V
See Fig 13
Test Condition
Test Condition
See Fig 5
POWER MOSFET
N-CHANNEL
D
D
S
F
DS
=250 A
=250 A
D
D
=17A
=15A,V
=7.5A
=7.5A
D
=25V,f =1MHz
C
GS
=17A,
=125 C
See Fig 7
=10V,
GS
=0V
(4)
(4) (5)
(4) (5)
(4)
(4)
(4)
(5)
(5)
2