IRF750A Fairchild Semiconductor, IRF750A Datasheet - Page 4

• Manufacturer Part Number: IRF750A
• Description: Advanced Power MOSFET
• Manufacturer: Fairchild Semiconductor

IRF750A
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
-1
2
1
0
- 7 5
1 0
0
Fig 7. Breakdown Voltage vs. Temperature
- 5 0
Fig 9. Max. Safe Operating Area
- 2 5
T
V
J
DS
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
, Junction Temperature [
, Drain-Source Voltage [V]
0
10
10
1 0
10
1
@ N o t e s :
- 1
- 2
0
10
1 . T
2 . T
3 . S i n g l e P u l s e
2 5
- 5
0.05
0.01
C
J
0.1
0.02
D=0.5
0.2
DS(on)
= 2 5
= 1 5 0
5 0
D C
o
C
o
C
1 0 m s
7 5
10
t
1 m s
1
1 0
- 4
single pulse
2
1 0 0
, Square Wave Pulse Duration
@ N o t e s :
1 0 0 s
1 . V
2 . I
o
C]
1 2 5
GS
D
= 2 5 0 A
= 0 V
Fig 11. Thermal Response
10
1 5 0
1 0 s
- 3
1 7 5
1 0
3
10
- 2
3 . 0
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
Fig 10. Max. Drain Current vs. Case Temperature
2 0
1 5
1 0
5
0
- 7 5
2 5
@ Notes :
1. Z
2. Duty Factor, D=t
3. T
10
Fig 8. On-Resistance vs. Temperature
- 5 0
P
DM
- 1
J M
J C
-T
- 2 5
5 0
(t)=0.8
T
C
J
=P
[sec]
T
t
, Junction Temperature [
c
1
D M
0
t
, Case Temperature [
2
*Z
10
o
0
C/W Max.
J C
2 5
7 5
(t)
1
/t
5 0
2
POWER MOSFET
N-CHANNEL
10
1 0 0
7 5
1
1 0 0
o
@ N o t e s :
C]
1 . V
2 . I
o
C]
1 2 5
1 2 5
GS
D
= 8 . 5 A
= 1 0 V
1 5 0
1 7 5
1 5 0
4