FDB6676S Fairchild Semiconductor, FDB6676S Datasheet - Page 4

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FDB6676S

Manufacturer Part Number
FDB6676S
Description
30V N-Channel PowerTrench SyncFET
Manufacturer
Fairchild Semiconductor
Datasheet
Typical Characteristics
1000
100
10
10
1
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
0.1
0
Figure 7. Gate Charge Characteristics.
0.001
0.01
R
0.1
SINGLE PULSE
R
DS(ON)
0.0001
I
1
D
V
JC
T
= 38A
GS
A
= 1.8
= 25
LIMIT
= 10V
o
o
C/W
C
D = 0.5
V
20
DS
0.2
0.1
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
0.01
1
Q
g
, GATE CHARGE (nC)
SINGLE
0.001
40
DC
Figure 11. Transient Thermal Response Curve.
10s
(continued)
10
V
DS
1s
0.01
= 10V
100m
60
10ms
20V
15V
100
80
0.1
1000
6400
5600
4800
4000
3200
2400
1600
800
800
600
400
200
0
0
Figure 8. Capacitance Characteristics.
0
1
C
RSS
Figure 10. Single Pulse Maximum
1
5
C
OSS
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
10
10
C
t
ISS
1
, TIME (sec)
15
Duty Cycle, D = t
T
P(pk
R
J
R
- T
JC
JC
(t) = r(t) * R
FDP6676S/FDB6676S Rev C (W)
100
20
100
C
= 1.8 °C/W
t
= P * R
1
t
2
SINGLE PULSE
R
JC
T
A
25
= 1.8°C/W
JC
= 25°C
1
JC
(t)
V
/ t
f = 1MHz
GS
2
= 0 V
1000
1000
30

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