FDB6676S Fairchild Semiconductor, FDB6676S Datasheet - Page 5

• Manufacturer Part Number: FDB6676S
• Description: 30V N-Channel PowerTrench SyncFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6676S.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6676).
Figure 12. FDP6676S SyncFET body diode
Figure 13. Non-SyncFET (FDP6676) body
diode reverse recovery characteristic.
reverse recovery characteristic.
Time : 12.5ns/div
Time : 12.5ns/div
(continued)
This diode
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET diode reverse leakage
0.00001
0.0001
0.001
0.01
0.1
versus drain-source voltage and
0
temperature.
V
DS
10
, REVERSE VOLTAGE (V)
T
T
A
A
= 100
= 25
o
FDP6676S/FDB6676S Rev C (W)
o
C
C
20
30