spa11n60c3e8185

Manufacturer Part Numberspa11n60c3e8185
DescriptionN-channel Mosfet >500v?900v Power Transistor Power Mosfet
ManufacturerInfineon Technologies Corporation
spa11n60c3e8185 datasheet
 


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Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
Package
SPP11N60C3
PG-TO220
PG-TO262
SPI11N60C3
PG-TO220 FP
SPA11N60C3
PG-TO220
SPA11N60C3E8185
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, t
limited by T
p
Avalanche energy, single pulse
I
=5.5A, V
=50V
D
DD
Avalanche energy, repetitive t
I
=11A, V
=50V
D
DD
Avalanche current, repetitive t
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
T
= 25°C
C
Operating and storage temperature
7)
Reverse diode dv/dt
Rev. 3 . 1
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
PG-TO220FP
P-TO220-3-31
Ordering Code
Q67040-S4395
Q67042-S4403
Q67040-S4408
Q67040-S4408
Symbol
I
D
I
jmax
D puls
E
AS
2)
E
limited by T
AR
AR
jmax
limited by T
I
AR
jmax
AR
V
GS
V
GS
P
tot
T
j ,
dv/dt
Page 1
SPP11N60C3
V
@ T
650
DS
jmax
R
0.38
DS(on)
I
11
D
PG-TO262
PG-TO220
3
2
1
Marking
11N60C3
11N60C3
11N60C3
11N60C3
11N60C3
Value
SPA
SPP_I
1)
11
11
1)
7
7
33
33
340
340
0.6
0.6
11
11
±20
±20
±30
±30
125
33
T
-55...+150
stg
15
2007-08-30
V
A
Unit
A
A
mJ
A
V
W
°C
V/ns

spa11n60c3e8185 Summary of contents

  • Page 1

    ... High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type Package SPP11N60C3 PG-TO220 PG-TO262 SPI11N60C3 PG-TO220 FP SPA11N60C3 PG-TO220 SPA11N60C3E8185 Maximum Ratings Parameter Continuous drain current ° 100 °C C Pulsed drain current, t limited by T ...

  • Page 2

    Maximum Ratings Parameter Drain Source voltage slope V = 480 125 ° Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ...

  • Page 3

    Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to ...

  • Page 4

    Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol ...

  • Page 5

    Power dissipation tot C SPP11N60C3 140 W 120 110 100 Safe operating area ...

  • Page 6

    Transient thermal impedance thJC p parameter K Typ. ...

  • Page 7

    Typ. drain-source on resistance R =f(I ) DS(on) D parameter: T =150° Ω 4. 1.6 1.4 1.2 1 0.8 0.6 0 Typ. transfer characteristics ≥ 2 ...

  • Page 8

    Forward characteristics of body diode parameter µ SPP11N60C3 °C typ 150 °C ...

  • Page 9

    Typ. drain source voltage slope dv/dt = f(R ), inductive load par.: V =380V, V =0/+13V 140 V/ns dv/dt(off) 120 110 100 dv/dt(on ...

  • Page 10

    Avalanche energy par 5 350 mJ 250 200 150 100 100 23 Avalanche power losses P = ...

  • Page 11

    Typ. C stored energy oss E =f(V ) oss DS 7.5 µJ 6 5.5 5 4.5 4 3.5 3 2.5 2 1 100 200 300 Definition of diodes switching characteristics Rev SPI11N60C3, SPA11N60C3, ...

  • Page 12

    PG-TO-220-3-1, PG-TO-220-3-21 Rev. 3.1 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 12 SPP11N60C3 2007-08-30 ...

  • Page 13

    PG-TO-220-3-31/3-111: Outline/ Fully isolated package (2500VAC; 1 minute). Rev. 3.1 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 13 SPP11N60C3 2007-08-30 ...

  • Page 14

    PG-TO-262-3-1 (I²-PAK) Rev SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 14 SPP11N60C3 2007-08-30 ...

  • Page 15

    PG-TO220-3-36:Outline fully isolated package (2500VAC; 1 minute) Rev. 3.1 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 15 SPP11N60C3 2007-08-30 ...

  • Page 16

    Published by Infineon Technologies AG 81726 München Germany © Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights ...