spa11n60c3e8185 Infineon Technologies Corporation, spa11n60c3e8185 Datasheet - Page 5

• Manufacturer Part Number: spa11n60c3e8185
• Description: N-channel Mosfet >500v?900v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
Rev. 3 .1
tot
= f ( V
10
10
= f (T
10
10
10
140
120
110
100
W
A
90
80
70
60
50
40
30
20
10
-1
-2
0
2
1
0
10
0
SPP11N60C3
0
DS
C
20
)
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
40
10
60
1
C
=25°C
80
100
10
120
2
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
°C
V
T
V
C
DS
160
10
3
Page 5
2 Power dissipation FullPAK
P
4 Safe operating area FullPAK
I
parameter: D = 0, T
D
tot
= f (V
10
10
= f (T
W
10
10
10
A
35
25
20
15
10
-1
-2
5
0
2
1
0
10
0
DS
0
C
20
)
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
40
10
60
C
1
= 25°C
80
100
SPP11N60C3
10
2007-08-30
120
2
°C
V
T
V
C
DS
160
10
3