spa11n60c3e8185 Infineon Technologies Corporation, spa11n60c3e8185 Datasheet - Page 4

• Manufacturer Part Number: spa11n60c3e8185
• Description: N-channel Mosfet >500v?900v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
R
R
R
R
R
R
Rev. 3.1
th1
th2
th3
th4
th5
th6
SPP_I
0.015
0.056
0.197
0.216
0.083
0.03
P
tot
(t)
Value
T
j
C
0.056
0.194
0.413
2.522
SPA
0.15
0.03
th1
R
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
th1
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
Page 4
T
V
V
di
T
C
GS
R
j
F
=25°C
C
=25°C
=480V, I
/dt=100A/µs
R
Symbol
C
C
C
C
C
C
th,n
Conditions
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
=I
T
T
=I
case
am b
S
S
,
0.0001878
0.0007106
0.000988
0.002791
0.007285
SPP_I
0.063
E xternal H eatsink
min.
-
-
-
-
-
-
-
Value
Values
0.0001878
0.0007106
1200
0.000988
0.002791
0.007401
typ.
400
41
1
6
0.412
-
-
SPP11N60C3
SPA
2007-08-30
max.
600
1.2
11
33
-
-
-
Unit
Ws/K
Unit
A
V
ns
µC
A
A/µs