fdc6000nz-f077 Fairchild Semiconductor, fdc6000nz-f077 Datasheet - Page 3

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fdc6000nz-f077

Manufacturer Part Number
fdc6000nz-f077
Description
Fdc6000nz Dual N-channel 2.5v Specified Powertrench? Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
NOTES:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Electrical characterization and datasheet limits was based on a single source configuration (pin 2 & 5 no connection).
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
t
Q
rr
Electrical Characteristics
the
drain pins. R
rr
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
Parameter
a)
θCA
68°C/W when
mounted on a 1in
of 2 oz copper (Single
Operation).
is determined by the user's board design.
T
2
A
I
pad
F
= 25°C unless otherwise noted
= 6.5 A, d
Test Conditions
iF
/d
t
= 100 A/µs
Min
b)
102°C/W when mounted
on a minimum pad of 2 oz
copper (Single Operation).
Typ Max Units
4.3
16
FDC6000NZ RevE1 (W)
nS
nC

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