km416rd8ac Samsung Semiconductor, Inc., km416rd8ac Datasheet - Page 58

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km416rd8ac

Manufacturer Part Number
km416rd8ac
Description
128/144mbit Rdram 256k X 16/18 Bit X 2*16 Dependent Banks Direct Rdramtm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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KM416RD8AC(D)/KM418RD8AC(D)
Absolute Maximum Ratings
I
a. The CMOS interface consumes power in all power states.
b. x16/x18 RDRAM data width
c. This does not include the IOL sink current. The RDRAM dissipates IOL VOL in each output driver when a logic one is driven.
DD
Symbol
V
V
T
I
I
I
I
I
I
I
DD,PDN
DD,NAP
DD,STBY
DD,ATTN
DD,ATTN-W
DD,ATTN-R
DD
STORE
I,ABS
DD,ABS
value
- Supply Current Profile
, V
DDA,ABS
RDRAM blocks consuming power
Self-refresh only for INIT.LSR=0
T/RCLK-Nap
T/RCLK, ROW-demux
T/RCLK, ROW-demux, COL-demux
T/RCLK, ROW-demux,COL-demux,DQ-demux,1 WR-SenseAmp,
4 ACT-Bank
T/RCLK, ROW-demux,COL-demux,DQ-mux,1 RD-SenseAmp,
4 ACT-Bank
Parameter
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
c
Table 23: Absolute Maximum Ratings
Table 24: Supply Current Profile
a
Page 55
575/625
490/520
Max
3000
-800
105
165
-45
4
b
Min
- 0.3
- 0.5
- 50
525/580
450/480
3000
Max
-711
100
155
Rev. 1.01 Oct. 1999
-45
4
Direct RDRAM
V
V
Max
DD
DD
100
+0.3
+1.0
455/500
400/420
-53.3
Max
3000
-600
140
90
4
Unit
V
V
C
Unit
mA
mA
mA
mA
mA
A

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