k9f1608w0a-tcb0 Samsung Semiconductor, Inc., k9f1608w0a-tcb0 Datasheet - Page 12

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k9f1608w0a-tcb0

Manufacturer Part Number
k9f1608w0a-tcb0
Description
2m X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
K9F1608W0A-TCB0
Manufacturer:
SIEMENS
Quantity:
2
For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
256byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
I/O
Figure 3. Program Operation with CE don’ t -care.
I/O
K9F1608W0A-TCB0, K9F1608W0A-TIB0
System Interface Using CE don’ t -care.
CLE
CE
WE
Figure 4. Read Operation with CE don’ t -care.
ALE
CE
WE
R/B
WE
CLE
ALE
CE
RE
0
0
~
~
7
7
t
CS
00H
80H
Start Add.(3Cycle)
Start Add.(3Cycle)
t
WP
t
CH
t
R
Data Input
12
I/O
CE
RE
0
~
Timing requirements : If CE is is exerted high during sequential
data-reading, the falling edge of CE to valid data(tCEA) must
be kept greater than 55ns.
7
CE don’ t -care
(Max. 55ns)
CE don’ t -care
t
Data Output(sequential)
CEA
t
REA
FLASH MEMORY
Data Input
out
10H

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