k9f1608w0a-tcb0 Samsung Semiconductor, Inc., k9f1608w0a-tcb0 Datasheet - Page 7

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k9f1608w0a-tcb0

Manufacturer Part Number
k9f1608w0a-tcb0
Description
2m X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
K9F1608W0A-TCB0
Manufacturer:
SIEMENS
Quantity:
2
K9F1608W0A-TCB0, K9F1608W0A-TIB0
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
AC TEST CONDITION
(K9F1608W0A-TCB0:T
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
Valid Block Number
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles in the Same Page
Block Erase Time
invalid blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are
guaranteed though its initial number could be reduced. (Refer to the attached technical notes)
CLE
H
H
X
X
X
X
L
L
L
L
L
K9F1608W0A
2. WP should be biased to CMOS high or CMOS low for standby.
Parameter
Parameter
Item
ALE
X
IL
H
H
X
X
X
L
L
L
L
L
(1)
or V
may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these
(T
IH
A
Parameter
A
=25 C, Vcc=5.0V f=1.0MHz)
=0 to 70 C, K9F1608W0A-TIB0:T
CE
X
X
X
H
L
L
L
L
L
L
L
Symbol
Symbol
CL=50pF(3.0V+/-10%),100pF(3.0V~3.6V)
N
C
C
VB
I/O
IN
WE
H
H
X
X
X
X
Vcc=2.7V ~ 3.6V
1 TTL GATE and
0.4V to 2.4V
Test Condition
RE
V
V
H
H
H
H
H
H
X
X
X
X
IL
IN
Min
502
=0V
=0V
Symbol
A
t
t
7
PROG
Nop
=-40 to 85 C, V
BERS
0V/V
WP
X
X
H
H
H
X
X
H
H
L
CC
(2)
0.8V and 2.0V
Min
Typ.
508
Min
Value
-
-
-
Data Input
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
-
-
5ns
CC
=2.7V ~ 5.5V unless otherwise noted)
Read Mode
Write Mode
1 TTL GATE and CL = 100pF
0.25
Typ
2
-
FLASH MEMORY
Vcc=3.6V ~ 5.5V
Max
Max
512
10
10
0.4V to 3.4V
Mode
Address Input(3clock)
Address Input(3clock)
Command Input
Command Input
Max
1.5
10
10
Blocks
Unit
Unit
pF
pF
cycles
Unit
ms
ms

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