k9f1608w0a-tcb0 Samsung Semiconductor, Inc., k9f1608w0a-tcb0 Datasheet - Page 6

• Manufacturer Part Number: k9f1608w0a-tcb0
• Description: 2m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1608W0A-TCB0
NOTE : 1. Vcc and VccQ pins are separater each other.
K9F1608W0A-TCB0, K9F1608W0A-TIB0
DC AND OPERATING CHARACTERISTICS
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Output Current
Operating
Supply Voltage
Supply Voltage
Supply Voltage
Current
Maximum DC voltage on input/output pins is V
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Parameter
Sequential Read
Program
Erase
Parameter
K9F1608W0A-TCB0
K9F1608W0A-TIB0
SS
Symbol
I
OL
I
I
I
I
I
V
V
CC
CC
CC
V
V
SB
SB
I
(R/B) V
I
LO
OH
LI
OL
IH
IL
1
2
1
2
3
Symbol
V
CC
V
V
tcycle=80ns, CE=V
I
CE=V
CE=V
V
V
I/O Pins
Except I/O Pins
I
I
CC
OUT
OH
OL
CC
SS
IN
OUT
OL
Q+0.3V which, during transitions, may overshoot to V
Q
=2.1mA
=0 to 5.5V
=-400 A
=0.4V
1)
=0mA
=0 to 5.5V
Test Conditions
IH
CC
, WP=0V/V
-0.2, WP=0V/V
:
T
-
-
-
A
=0 to 70 C, K9F1608W0A-TIB0
CC
Min
IL
(Recommended operating conditions otherwise noted.)
2.7
2.7
Symbol
0
,
T
T
V
I
BIAS
STG
OS
CC
6
IN
Min
-0.3
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
Vcc=2.7V ~ 3.6V
Typ
Typ.
10
10
10
10
5
-
-
-
-
-
-
-
-
0
-
-
-0.6 to +7.0
-10 to +125
-40 to +125
-65 to +150
V
V
CC
Rating
CC
Max
0.6
0.4
20
20
20
50
CC
Q+0.3
1
10
10
5
-
-
+0.3
+2.0V for periods <20ns.
:
T
A
FLASH MEMORY
=-40 to 85 C)
Min
-0.3
3.0
3.0
2.4
Max
5.5
5.5
8
-
-
-
-
-
-
-
-
0
Vcc=3.6V ~ 5.5V
Typ
15
15
25
10
5
-
-
-
-
-
-
-
-
V
V
CC
CC
Max
Unit
0.8
0.4
mA
30
30
40
50
Q+0.5
V
1
10
10
-
-
+0.5
C
C
Unit
V
V
V
Unit
mA
mA
V
A