k9f1608w0a-tcb0 Samsung Semiconductor, Inc., k9f1608w0a-tcb0 Datasheet - Page 8

• Manufacturer Part Number: k9f1608w0a-tcb0
• Description: 2m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

AC Timing Characteristics for Command / Address / Data Input
AC Characteristics for Operation
NOTE : 1. If CE goes high within 30ns after the rising edge of the last RE, R/B will not return to V
K9F1608W0A-TCB0, K9F1608W0A-TIB0
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Data Transfer from Cell to Register
ALE to RE Delay
ALE to RE Delay(read ID)
CE to RE Delay( ID read)
Ready to RE Low
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High Hold Time
Output Hi-Z to RE Low
Last RE High to Busy(at sequential read)
CE High to Ready(in case of interception by CE at read)
CE High Hold Time(at the last serial read)
RE Low to Status Output
CE Low to Status Output
RE High to WE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
2. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
3. To break the sequential read cycle, CE must be held high for longer time than t
Parameter
Parameter
(3)
Symbol
t
t
t
(1)
t
t
t
t
CLH
t
t
t
t
CLS
ALS
ALH
CH
WP
DH
WC
WH
CS
DS
8
Symbol
t
t
t
t
t
t
t
t
t
t
RSTO
CSTO
t
t
t
RHW
WHR
t
t
t
t
t
AR1
REA
RHZ
CHZ
REH
CRY
CEH
RST
t
WB
t
AR
CR
RR
RC
RB
IR
R
CEH
Min
20
40
20
40
40
20
40
30
20
80
20
.
OL
Min
150
200
200
250
.
20
80
20
50
5
0
0
-
-
-
-
-
-
-
-
-
FLASH MEMORY
100+tr(R/B)
Max
-
-
-
-
-
-
-
-
-
-
-
5/10/500
Max
200
200
10
45
20
30
45
55
-
-
-
-
-
-
-
-
-
-
(2)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s